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Data Sheet No. PD60209 revC
IR2308 (S) & (PbF)
HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
Packages
?
?
?
?
?
?
?
?
?
?
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise immunity
Also available LEAD_FREE
8-Lead SOIC - IR2308S
Also available 8-Lead PDIP
LEAD-FREE (PbF) IR2308
2106//2108//2109/2304/2308 Feature Comparison
Cross-
Input conduction
Part Dead-Time Ground Pins
logic prevention
logic
2106
21064
HIN/LIN
no
none
COM
VSS/COM
Description
The IR2308(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
2108
21084
2109
21094
HIN/LIN yes
IN/SD yes
Internal 540ns
Programmable 0.54~5 μ s
Internal 540ns
Programmable 0.54~5 μ s
COM
VSS/COM
COM
VSS/COM
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
2304
2308
HIN/LIN
HIN/LIN
yes
yes
Internal 100ns COM
Internal 540ns COM
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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